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參數(shù)資料
| 型號(hào)： | NAND128W4A0CV6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 22/57頁 |
| 文件大?。?/td> | 410K |
| 代理商： | NAND128W4A0CV6T |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
22/57
Read Memory Array
Each operation to read the memory area starts
with a pointer operation as shown in the
Pointer
Operations
section. Once the area (main or spare)
has been selected using the Read A, Read B or
Read C commands four bus cycles (for 512Mb
and 1Gb devices) or three bus cycles (for 128Mb
and 256Mb devices) are required to input the ad-
dress (refer to
Table 6.
) of the data to be read.
The device defaults to Read A mode after power-
up or a Reset operation.
When reading the spare area addresses:
A0 to A3 (x8 devices)
A0 to A2 (x16 devices)
are used to set the start address of the spare area
while addresses:
A4 to A7 (x8 devices)
A3 to A7 (x16 devices)
are ignored.
Once the Read A or Read C commands have
been issued they do not need to be reissued for
subsequent read operations as the pointer re-
mains in the respective area. However, the Read
B command is effective for only one operation,
once an operation has been executed in Area B
the pointer returns automatically to Area A and so
another Read B command is required to start an-
other read operation in Area B.
■
■
■
■
Once a read command is issued three types of op-
erations are available: Random Read, Page Read
and Sequential Row Read.
Random Read.
Each time the command is is-
sued the first read is Random Read.
Page Read.
After the Random Read access the
page data is transferred to the Page Buffer in a
time of
t
WHBH
(refer to
Table 21.
for value). Once
the transfer is complete the Ready/Busy signal
goes High. The data can then be read out sequen-
tially (from selected column address to last column
address) by pulsing the Read Enable signal.
Sequential Row Read.
After the data in last col-
umn of the page is output, if the Read Enable sig-
nal is pulsed and Chip Enable remains Low then
the next page is automatically loaded into the
Page Buffer and the read operation continues. A
Sequential Row Read operation can only be used
to read within a block. If the block changes a new
read command must be issued.
Refer to
Figure 15.
and
Figure 16.
for details of Se-
quential Row Read operations.
To terminate a Sequential Row Read operation set
the Chip Enable signal to High for more than t
EHEL
.
Sequential Row Read is not available when the
Chip Enable Don't Care option is enabled.
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相關(guān)代理商/技術(shù)參數(shù) |
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