參數(shù)資料
型號(hào): NCP511
廠商: ON SEMICONDUCTOR
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: 150 mA CMOS Low Iq Low-Dropout Voltage Regulator
中文描述: 一百五十毫安CMOS低智商低壓差穩(wěn)壓器
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 85K
代理商: NCP511
NCP511
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
in
= V
out(nom.)
+ 1.0 V, V
enable
= V
in
, C
in
= 1.0 F, C
out
= 1.0 F, T
J
= 25
°
C, unless
otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (T
A
= 25
°
C, I
out
= 1.0 mA)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
5.0 V
V
out
1.455
1.746
2.425
2.646
2.744
2.94
3.234
4.900
1.5
1.8
2.5
2.7
2.8
3.0
3.3
5.0
1.545
1.854
2.575
2.754
2.856
3.06
3.366
5.100
V
Output Voltage (T
A
= 40
°
C to 85
°
C, I
out
= 1.0 mA)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
5.0 V
V
out
1.455
1.746
2.425
2.619
2.716
2.910
3.201
4.900
1.5
1.8
2.5
2.7
2.8
3.0
3.3
5.0
1.545
1.854
2.575
2.781
2.884
3.09
3.399
5.100
V
Line Regulation (I
out
= 10 mA)
1.5 V4.4 V (V
in
= V
out(nom.)
+ 1.0 V to 6.0 V)
4.5 V5.0 V (V
in
= 5.5 V to 6.0 V)
Reg
line
1.0
1.0
3.5
3.5
mV/V
Load Regulation (I
out
= 1.0 mA to 150 mA)
Reg
load
0.3
0.8
mV/mA
Output Current (V
out
= (V
out
at I
out
= 150 mA) 3%)
1.5 V1.8 V (V
in
= 4.0 V)
1.9 V3.0 V (V
in
= 5.0 V)
3.1 V5.0 V (V
in
= 6.0 V)
I
out(nom.)
150
150
150
mA
Dropout Voltage (I
out
= 100 mA, Measured at V
out
3.0%)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
5.0 V
V
in
V
out
245
160
110
100
100
100
90
75
350
200
200
200
200
200
200
200
mV
Quiescent Current
(Enable Input = 0 V)
(Enable Input = V
in
, I
out
= 1.0 mA to I
o(nom.)
)
I
Q
0.1
40
1.0
100
A
Output Voltage Temperature Coefficient
T
C
100
ppm/
°
C
Enable Input Threshold Voltage
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
V
th(en)
1.3
0.3
V
Output Short Circuit Current (V
out
= 0 V)
1.5 V1.8 V (V
in
= 4.0 V)
1.9 V3.0 V (V
in
= 5.0 V)
3.1 V5.0 V (V
in
= 6.0 V)
I
out(max)
200
200
200
400
400
400
800
800
800
mA
Ripple Rejection (f = 1.0 kHz, I
o
= 60 mA)
RR
50
dB
Output Noise Voltage (f = 20 Hz to 100 kHz, I
out
= 60 mA)
3. Maximum package power dissipation limits must be observed.
TJ(max)
TA
RJA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
V
n
110
Vrms
PD
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