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參數(shù)資料
| 型號： | NCP511 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 150 mA CMOS Low Iq Low-Dropout Voltage Regulator |
| 中文描述： | 一百五十毫安CMOS低智商低壓差穩(wěn)壓器 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 85K |
| 代理商： | NCP511 |
NCP511
http://onsemi.com
9
0
3
100
2
120
40
160
Time (ms)
V
o
O
2
1
20
4
1
0
140
80
60
0
E
T
A
= 25
°
C
V
in
= 3.5 V
V
out
= 3.0 V
C = 1.0 F
R = 1.0 M
C = 0.1 F
No Delay
3
Output
R
1
2
3
5
4
Input
1.0 F
1.0 F
Output
1
2
3
5
4
Input
1.0 F
1.0 F
Q2
Q1
R3
R1
R2
Output
1
2
3
5
4
Input
1.0 F
1.0 F
Output
1
2
3
5
4
Enable
1.0 F
1.0 F
C
Output
1
2
3
5
4
Input
1.0 F
1.0 F
Q1
R
5.6 V
R = 1.0 M
R = 1.0 mW
Figure 18. Current Boost Regulator
Figure 19. Current Boost Regulator
with Short Circuit Limit
Figure 20. Delayed Turnon
Figure 21. Delayed Turnon
Figure 22. Input Voltages Greater than 6.0 V
A regulated output can be achieved with input voltages that
exceed the 6.0 V maximum rating of the NCP511 series with
the addition of a simple preregulator circuit. Care must be
taken to prevent Q1 from overheating when the regulated
output (V
out
) is shorted to GND.
The NCP511 series can be current boosted with a PNP transis-
tor. Resistor R in conjunction with V
BE
of the PNP determines
when the pass transistor begins conducting; this circuit is not
short circuit proof. Input/Output differential voltage minimum is
increased by V
BE
of the pass resistor.
Short circuit current limit is essentially set by the V
BE
of Q2 and
R1. I
SC
= ((V
BEQ2
ib * R2) / R1) + I
O(max) Regulator
If a delayed turnon is needed during power up of several volt-
ages then the above schematic can be used. Resistor R, and
capacitor C, will delay the turnon of the bottom regulator. A
few values were chosen and the resulting delay can be seen in
Figure 21.
The graph shows the delay between the enable signal and
output turnon for various resistor and capacitor values.
Q1
R
APPLICATION CIRCUITS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCP511/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:150 mA CMOS Low Iq Low-Dropout Voltage Regulator |
| NCP511_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:150 mA CMOS Low Iq Low−Dropout Voltage Regulator |
| NCP5111 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Voltage, High and Low Side Driver |
| NCP5111DR2G | 功能描述:功率驅(qū)動器IC HIGH VOLT MOSFET DR MOSFET IGBT DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| NCP5111PG | 功能描述:功率驅(qū)動器IC HIGH VOLT MOSFET DR MOSFET IGBT DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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