ELECTRICAL CHARACTERISTICS (Note 4) Characteristic Test Cond" />
參數(shù)資料
型號(hào): NE5517DG
廠商: ON Semiconductor
文件頁(yè)數(shù): 10/15頁(yè)
文件大?。?/td> 0K
描述: IC AMP XCONDUCTANCE DUAL 16-SOIC
標(biāo)準(zhǔn)包裝: 48
放大器類型: 跨導(dǎo)
電路數(shù): 2
輸出類型: 推挽式
轉(zhuǎn)換速率: 50 V/µs
增益帶寬積: 2MHz
電流 - 輸入偏壓: 400nA
電壓 - 輸入偏移: 400µV
電流 - 電源: 2.6mA
電流 - 輸出 / 通道: 650µA
電壓 - 電源,單路/雙路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 管件
產(chǎn)品目錄頁(yè)面: 1131 (CN2011-ZH PDF)
其它名稱: NE5517DG-ND
NE5517DGOS
NE5517, NE5517A, AU5517
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (Note 4)
Characteristic
Test Conditions
Symbol
AU5517/NE5517
NE5517A
Unit
Min
Typ
Max
Min
Typ
Max
Input Offset Voltage
Overtemperature Range
IABC 5.0 mA
VOS
0.4
0.3
5.0
0.4
0.3
2.0
5.0
2.0
mV
DVOS/DT
Avg. TC of Input Offset Voltage
7.0
mV/°C
VOS Including Diodes
Diode Bias Current
(ID) = 500 mA
0.5
5
0.5
2.0
mV
Input Offset Change
5.0 mA ≤ IABC ≤ 500 mA
VOS
0.1
3.0
mV
Input Offset Current
IOS
0.1
0.6
0.1
0.6
mA
DIOS/DT
Avg. TC of Input Offset Current
0.001
mA/°C
Input Bias Current
Overtemperature Range
IBIAS
0.4
1.0
5.0
8.0
0.4
1.0
5.0
7.0
mA
DIB/DT
Avg. TC of Input Current
0.01
mA/°C
Forward Transconductance
Overtemperature Range
gM
6700
5400
9600
13000
7700
4000
9600
12000
mmho
gM Tracking
0.3
dB
Peak Output Current
RL = 0, IABC = 5.0 mA
RL = 0, IABC = 500 mA
RL = 0, Overtemperature
Range
IOUT
350
300
5.0
500
650
3.0
350
300
5.0
500
7.0
650
mA
Peak Output Voltage
Positive
Negative
RL = ∞, 5.0 mA ≤ IABC ≤ 500 mA
VOUT
+12
12
+14.2
14.4
+12
12
+14.2
14.4
V
Supply Current
IABC = 500 mA, both channels
ICC
2.6
4.0
2.6
4.0
mA
VOS Sensitivity
Positive
Negative
D VOS/D V+
D VOS/D V
20
150
20
150
mV/V
Common-mode Rejection
Ration
CMRR
80
110
80
110
dB
Common-mode Range
±12
±13.5
±12
±13.5
V
Crosstalk
Referred to Input (Note 5)
20 Hz < f < 20 kHz
100
dB
Differential Input Current
IABC = 0, Input = ±4.0 V
IIN
0.02
100
0.02
10
nA
Leakage Current
IABC = 0 (Refer to Test Circuit)
0.2
100
0.2
5.0
nA
Input Resistance
RIN
10
26
10
26
kW
Open-loop Bandwidth
BW
2.0
MHz
Slew Rate
Unity Gain Compensated
SR
50
V/ms
Buffer Input Current
5
INBUFFER
0.4
5.0
0.4
5.0
mA
Peak Buffer Output Voltage
5
VOBUFFER
10
V
DVBE of Buffer
Refer to Buffer VBE Test
Circuit (Note 6)
0.5
5.0
0.5
5.0
mV
4. These specifications apply for VS = ±15 V, Tamb = 25°C, amplifier bias current (IABC) = 500 mA, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
5. These specifications apply for VS = ±15 V, IABC = 500 mA, ROUT = 5.0 kW connected from the buffer output to VS and the input of the buffer
is connected to the transconductance amplifier output.
6. VS = ±15, ROUT = 5.0 kW connected from Buffer output to VS and 5.0 mA ≤ IABC ≤ 500 mA.
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