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參數(shù)資料
| 型號(hào)： | NTB13N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 13 Amps, 100 Volts N–Channel Enhancement–Mode(13 A, 100 V，N通道，增強(qiáng)模式功率MOSFET) |
| 中文描述： | 13 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | NTB13N10 |
NTB13N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
–
–
147
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 125
°
C)
I
DSS
–
–
–
–
5.0
50
Adc
Gate–Body Leakage Current (V
GS
=
20
Vdc, V
DS
= 0)
I
GSS
–
–
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V
DS
= V
GS,
I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
–
3.2
–7.6
4.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–State Resistance
(V
GS
= 10 Vdc, I
D
= 6.5 Adc)
(V
GS
= 10 Vdc, I
D
= 6.5 Adc, T
J
= 125
°
C)
R
DS(on)
–
–
0.130
0.250
0.165
0.400
Drain–to–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 13 Adc)
V
DS(on)
–
1.82
2.34
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 6.5 Adc)
g
FS
–
6.0
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
1 0 MHz)
f = 1.0 MHz)
C
iss
–
390
550
pF
Output Capacitance
C
oss
–
115
160
Reverse Transfer Capacitance
C
rss
–
35
70
SWITCHING CHARACTERISTICS
(Notes 2 and 3)
Turn–On Delay Time
(V
DD
= 80 Vdc, I
D
= 13 Adc,
10 Vdc R
V
GS
= 10 Vdc, R
G
= 9.1 )
9 1
t
d(on)
–
11
20
ns
Rise Time
t
r
–
40
80
Turn–Off Delay Time
t
d(off)
–
20
40
Fall Time
t
f
–
36
70
Total Gate Charge
(V
DS
= 80 Vdc, I
D
= 13 Adc,
V
GS
= 10 Vdc)
Q
tot
–
14
20
nC
Gate–to–Source Charge
Q
gs
–
3.0
–
Gate–to–Drain Charge
Q
gd
–
7.0
–
BODY–DRAIN DIODE RATINGS
(Note 2)
Diode Forward On–Voltage
(I
S
= 13 Adc, V
GS
= 0 Vdc)
(I
S
= 13 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
–
–
0.98
0.88
1.3
–
Vdc
Reverse Recovery Time
(I
S
= 13 Adc, V
GS
= 0 Vdc,
dI /dt = 100 A/ s)
100 A/ s)
t
rr
–
85
–
ns
t
a
–
60
–
t
b
–
28
–
Reverse Recovery Stored Charge
Q
RR
–
0.3
–
C
2. Indicates Pulse Test: P.W. = 300 s max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
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