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參數(shù)資料
| 型號： | NTB5405N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 69K |
| 代理商： | NTB5405N |
NTB5405N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
39
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 40
V
T
J
= 25
°
C
1.0
A
T
J
= 100
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
30 V
±
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
3.5
V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
7.0
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 40
A
4.9
5.8
m
V
GS
= 5.0
V, I
D
= 15
A
7.0
8.0
Forward Transconductance
g
FS
V
GS
= 10
V, I
D
= 15
A
32
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 32
V
2700
4000
pF
Output Capacitance
C
OSS
700
1400
Reverse Transfer Capacitance
C
RSS
300
600
Total Gate Charge
Q
G(TOT)
V
GS
= 10 V, V
DS
= 32
V,
I
D
= 40
A
88
nC
Threshold Gate Charge
Q
G(TH)
3.25
GatetoSource Charge
Q
GS
9.5
GatetoDrain Charge
Q
GD
37
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
TurnOn Delay Time
t
d(ON)
V
GS
= 10
V, V
DD
= 32
V,
I
D
= 40
A, R
G
= 2.5
8.5
ns
Rise Time
t
r
52
TurnOff Delay Time
t
d(OFF)
55
Fall Time
t
f
70
SWITCHING CHARACTERISTICS, V
GS
= 5 V
(Note 3)
TurnOn Delay Time
t
d(ON)
V
GS
= 5
V, V
DD
= 20
V,
I
D
= 20
A, R
G
= 2.5
19
ns
Rise Time
t
r
153
TurnOff Delay Time
t
d(OFF)
32
Fall Time
t
f
42
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25
°
C
0.82
1.1
V
T
J
= 100
°
C
TBD
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/ s,
I
S
A
66
ns
Charge Time
t
a
35
Discharge Time
t
b
31
Reverse Recovery Charge
Q
RR
113
nC
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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