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參數(shù)資料
| 型號(hào)： | NTB5405N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 69K |
| 代理商： | NTB5405N |
NTB5405N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125
°
C
T
J
= 25
°
C
0
25
2
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
D
0
Figure 1. OnRegion Characteristics
3
25
0
Figure 2. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance vs. GatetoSource
Voltage
R
D
D
I
D
D
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50
0
25
25
2
1
0.8
0.6
50
175
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
T
J
= 55
°
C
75
T
J
= 25
°
C
I
D
= 40 A
V
GS
= 10 V
R
D
D
R
R
D
D
V
GS
= 10 V
Figure 6. DraintoSource Leakage Current
vs. Voltage
4 V
4.5 V
V
GS
= 5 V
V
DS
≥
10 V
3.5 V
4
V
GS
= 6 V to 10 V
50
125
100
5
10
0.008
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0.004
0.005
0.006
0.01
3
6
0.003
4
0.006
0.002
0.01
0.004
0.003
0.005
6
10
1
2
25
115
35
45
1.8
50
4
0.007
8
65
55
175
75
I
D
= 40 A
T
J
= 25
°
C
8
5.5 V
7
5
9
0.009
0.007
0.008
0.009
105
15
75
85
95
1.6
1.4
1.2
150
1
3
7
5
9
75
150
125
100
5 V
8
6
7
0
100
125
200
10
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
D
,
T
J
= 100
°
C
15
35
40
1000
20
100
30
25
10
10000
100000
T
J
= 175
°
C
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| NTB5405NG | 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB5405NT4G | 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB5411N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 |
| NTB5411NT4G | 功能描述:MOSFET NFET D2PAK 60V 75A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB5412N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220 |
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