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參數(shù)資料
| 型號： | NTD20P06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| 中文描述： | 15.5 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NTD20P06L |
NTD20P06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
74
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
64
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25
°
C
1.0
A
T
J
= 150
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0
1.5
2.0
V
Gate Threshold Temperature Coefficient
V
GS(TH)
/T
J
3.1
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 5.0 V, I
D
= 7.5 A
0.130
0.150
V
GS
= 5.0 V, I
D
= 15 A
0.143
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 7.5 A
11
S
DraintoSource OnVoltage
V
DS(on)
V
GS
= 5.0 V,
I
D
= 7.5 A
T
J
= 25
°
C
1.2
V
T
J
= 150
°
C
1.9
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
740
1190
pF
Output Capacitance
C
OSS
V
= 0 V, f = 1 MHz, V
= 25 V
GS
207
300
Reverse Transfer Capacitance
C
RSS
DS
66
120
Total Gate Charge
Q
G(TOT)
15
26
nC
GatetoSource Charge
Q
GS
V
GS
= 5.0 V, V
= 48 V,
I
D
= 18 A
4.0
GatetoDrain Charge
Q
GD
7.0
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(ON)
11
20
ns
Rise Time
t
r
V
GS
= 5.0 V, V
DD
= 30 V,
I
D
= 15 A, R
G
= 9.1
90
180
TurnOff Delay Time
t
d(OFF)
28
50
Fall Time
t
f
70
135
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V I = 15 A
S
= 15 A
T
J
= 25
°
C
1.5
2.5
V
T
J
= 150
°
C
1.3
Reverse Recovery Time
t
RR
60
ns
Charge Time
t
a
V
GS
= 0 V, d
IS
/d
t
= 100 A/ s,
I
S
= 12 A
39
Discharge Time
t
b
21
Reverse Recovery Charge
Q
RR
0.13
nC
3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures
300 s, duty cycle
2%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD20P06L-001 | 功能描述:MOSFET -60V -15.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20P06L-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06L-1G | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20P06LG | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20P06LG | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 15.5A D-PAK |
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