- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361155 > NTD20P06L (ON SEMICONDUCTOR) Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK PDF資料下載
參數(shù)資料
| 型號(hào)： | NTD20P06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| 中文描述： | 15.5 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | NTD20P06L |
NTD20P06L
http://onsemi.com
3
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAINTOSOURCE VOLTAGE (V)
D
,
Figure 1. OnRegion Characteristics
V
GS
= 6 V
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 10 V
V
GS
= 9 V
V
GS
= 8 V
V
GS
= 7 V
T
J
= 25
°
C
0
10
20
30
40
0
1
2
3
4
5
6
7
8
9
V
DS
, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
D
,
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
VDS
10 V
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
5
10
15
20
25
30
R
D
,
(
Figure 3. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (A)
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 55
°
C
V
GS
= 5 V
0
0.025
0.05
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
0
3
6
9
12
15
18
21
24
V
GS
= 5 V
V
GS
= 10 V
T
J
= 25
°
C
R
D
,
Figure 4. OnResistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (A)
0
50
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
25
0
25
50
75
100
125
150
R
D
,
(
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
I
D
= 7.5 A
V
GS
= 5 V
1
10
100
1000
10000
5
10
15
20
25
30
35
40
45
50
55
60
Figure 6. DraintoSource Leakage Current
versus Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (V)
D
,
T
J
= 125
°
C
T
J
= 150
°
C
V
GS
= 0 V
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTD20P06LG | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LT4 | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LT4G | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD23N03R | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1 | 23 Amps, 25 Volts, N−Channel DPAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD20P06L-001 | 功能描述:MOSFET -60V -15.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20P06L-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06L-1G | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20P06LG | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20P06LG | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 15.5A D-PAK |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。