參數(shù)資料
型號： NX3008NBK
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 30 V, 400 mA N-channel Trench MOSFET
中文描述： SMALL SIGNAL, FET
封裝： PLASTIC, TO-236AB, 3 PIN
文件頁數(shù)： 6/16頁
文件大?。?/td> 872K
代理商： NX3008NBK
NX3008NBK
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 August 2011
6 of 16
NXP Semiconductors
NX3008NBK
30 V, 400 mA N-channel Trench MOSFET
7.
Characteristics
Table 7.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
30
-
-
V
V
GSth
I
D
= 250 μA; V
DS
= V
GS
; T
j
= 25 °C
0.6
0.9
1.1
V
I
DSS
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 350 mA; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 350 mA; T
j
= 150 °C
V
GS
= 2.5 V; I
D
= 200 mA; T
j
= 25 °C
V
GS
= 1.8 V; I
D
= 10 mA; T
j
= 25 °C
V
DS
= 10 V; I
D
= 350 mA; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
10
10
1
1
1
1.8
1.4
2
310
1
10
1
1
-
-
-
-
1.4
2.5
2.1
2.8
-
μA
μA
μA
μA
nA
nA
nA
nA
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
g
fs
forward
transconductance
mS
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= 15 V; I
D
= 400 mA; V
GS
= 4.5 V;
T
j
= 25 °C
-
-
-
-
-
-
0.52
0.17
0.08
34
6.5
2.2
0.68
-
-
50
-
-
nC
nC
nC
pF
pF
pF
V
DS
= 15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
V
DS
= 20 V; R
L
= 250
; V
GS
= 4.5 V;
R
G(ext)
= 6
; T
j
= 25 °C
-
-
-
-
15
11
69
19
30
-
138
-
ns
ns
ns
ns
source-drain voltage
I
S
= 350 mA; V
GS
= 0 V; T
j
= 25 °C
0.47
0.85
1.2
V
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