參數(shù)資料
型號(hào)： NX3008PBK
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 30 V, 230 mA P-channel Trench MOSFET
中文描述： SMALL SIGNAL, FET
封裝： PLASTIC, TO-236AB, 3 PIN
文件頁(yè)數(shù)： 6/16頁(yè)
文件大?。?/td> 873K
代理商： NX3008PBK
NX3008PBK
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
6 of 16
NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
7.
Characteristics
Table 7.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
I
D
= -250 μA; V
GS
= 0 V; T
j
= 25 °C
-30
-
-
V
V
GSth
I
D
= -250 μA; V
DS
= V
GS
; T
j
= 25 °C
-0.6
-0.9
-1.1
V
I
DSS
V
DS
= -30 V; V
GS
= 0 V; T
j
= 150 °C
V
DS
= -30 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -200 mA; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -200 mA; T
j
= 150 °C
V
GS
= -2.5 V; I
D
= -10 mA; T
j
= 25 °C
V
DS
= -10 V; I
D
= -200 mA; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.2
-0.2
-10
-10
-1
-1
2.8
5.3
5.3
160
-10
-1
-1
-1
-
-
-
-
4.1
7.8
6.5
-
μA
μA
μA
μA
nA
nA
nA
nA
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
g
fs
forward
transconductance
mS
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= -15 V; I
D
= -200 mA;
V
GS
= -4.5 V; T
j
= 25 °C
-
-
-
-
-
-
0.55
0.23
0.09
31
6.5
2.3
0.72
-
-
46
-
-
nC
nC
nC
pF
pF
pF
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
V
DS
= -20 V; R
L
= 250
; V
GS
= -4.5 V;
R
G(ext)
= 6
; T
j
= 25 °C
-
-
-
-
19
30
65
38
38
-
130
-
ns
ns
ns
ns
source-drain voltage
I
S
= -200 mA; V
GS
= 0 V; T
j
= 25 °C
-0.47
-0.88
-1.2
V
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NX3008PBKMB 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:30 V, single P-channel Trench MOSFET
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NX3008PBKS 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 200MA SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBKS,115 功能描述:MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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