參數(shù)資料
型號(hào)： NX3008PBK
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 30 V, 230 mA P-channel Trench MOSFET
中文描述： SMALL SIGNAL, FET
封裝： PLASTIC, TO-236AB, 3 PIN
文件頁(yè)數(shù)： 7/16頁(yè)
文件大?。?/td> 873K
代理商： NX3008PBK
NX3008PBK
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
7 of 16
NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
T
j
= 25 °C
T
j
= 25 °C; V
DS
= -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C
(1) V
GS
= -1.75 V
(2) V
GS
= -2.0 V
(3) V
GS
= -2.25 V
(4) V
GS
= -2.5 V
(5) V
GS
= -3.0 V
(6) V
GS
= -4.5 V
Drain-source on-state resistance as a function
of drain current; typical values
I
D
= -200 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 8.
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0
-4
-3
-1
-2
001aao256
-0.10
-0.15
-0.05
-0.20
-0.25
I
D
(A)
0.00
-2 V
-2.5 V
V
GS
= -1.5 V
-4.5 V
-3 V
001aao257
V
GS
(V)
0.0
-1.5
-1.0
-0.5
-10
-4
-10
-5
-10
-3
I
D
(A)
-10
-6
(2)
(1)
(3)
I
D
(A)
0
-0.25
-0.20
-0.10
-0.15
-0.05
001aao258
14
R
DS
(on)
(Ω)
10
6
2
0
4
8
12
(1)
(2)
(3)
(5)
(6)
(4)
V
GS
(A)
0
-5
-4
-2
-3
-1
001aao259
14
R
DS
(on)
(Ω)
10
6
2
0
4
8
12
(1)
(2)
相關(guān)PDF資料
PDF描述
NX3L4357GM Low-ohmic single-pole triple-throw analog switch with enable input
S07M-GS08 Diode Small Signal Switching 1KV 1.5A 2-Pin DO-219AB T/R
S07G-GS08 S07B, S07D, S07G, S07J, S07M Standard Recovery Rectifier High Voltage Surface Mount
S100-T3 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
S15VB100 15A BRIDGE RECTIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NX3008PBK,215 功能描述:MOSFET 30V 230 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008PBKMB 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:30 V, single P-channel Trench MOSFET
NX3008PBKMB,315 功能描述:MOSFET P-Chan -30V -300mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008PBKS 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 200MA SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBKS,115 功能描述:MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*