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參數(shù)資料
| 型號(hào)： | OP162GSZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 14/20頁 |
| 文件大小： | 0K |
| 描述： | IC OPAMP GP R-R 15MHZ LN 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 放大器類型： | 通用 |
| 電路數(shù)： | 1 |
| 輸出類型： | 滿擺幅 |
| 轉(zhuǎn)換速率： | 13 V/µs |
| 增益帶寬積： | 15MHz |
| 電流 - 輸入偏壓： | 260nA |
| 電壓 - 輸入偏移： | 25µV |
| 電流 - 電源： | 650µA |
| 電流 - 輸出 / 通道： | 30mA |
| 電壓 - 電源，單路/雙路(±)： | 2.7 V ~ 12 V，±1.35 V ~ 6 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 帶卷 (TR) |
Data Sheet
OP162/OP262/OP462
Rev. H | Page 3 of 20
SPECIFICATIONS
@ VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1. Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
OP162G, OP262G, OP462G
45
325
V
–40°C ≤ TA ≤ +125°C
800
V
H grade, –40°C ≤ TA ≤ +125°C
1
mV
D grade
0.8
3
mV
–40°C ≤ TA ≤ +125°C
5
mV
Input Bias Current
IB
360
600
nA
–40°C ≤ TA ≤ +125°C
650
nA
Input Offset Current
IOS
±2.5
±25
nA
–40°C ≤ TA ≤ +125°C
±40
nA
Input Voltage Range
VCM
0
4
V
Common-Mode Rejection
CMRR
0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C
70
110
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ, 0.5 ≤ VOUT ≤ 4.5 V
30
V/mV
RL = 10 kΩ, 0.5 ≤ VOUT ≤ 4.5 V
65
88
V/mV
RL = 10 kΩ, –40°C ≤ TA ≤ +125°C
40
V/mV
Long-Term Offset Voltage1
VOS
G grade
600
V
Offset Voltage Drift2
VOS/T
1
V/°C
Bias Current Drift
IB/T
250
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
IL = 250 A, –40°C ≤ TA ≤ +125°C
4.95
4.99
V
IL = 5 mA
4.85
4.94
V
Output Voltage Swing Low
VOL
IL = 250 A, –40°C ≤TA ≤ +125°C
14
50
mV
IL = 5 mA
65
150
mV
Short-Circuit Current
ISC
Short to ground
±80
mA
Maximum Output Current
IOUT
±30
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 7 V
120
dB
–40°C ≤ TA ≤ +125°C
90
dB
Supply Current/Amplifier
ISY
OP162, VOUT = 2.5 V
600
750
A
–40°C ≤ TA ≤ +125°C
1
mA
OP262, OP462, VOUT = 2.5 V
500
700
A
–40°C ≤ TA ≤ +125°C
850
A
DYNAMIC PERFORMANCE
Slew Rate
SR
1 V < VOUT < 4 V, RL = 10 kΩ
10
V/s
Settling Time
tS
To 0.1%, AV = –1, VO = 2 V step
540
ns
Gain Bandwidth Product
GBP
15
MHz
Phase Margin
φm
61
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.5
V p-p
Voltage Noise Density
en
f = 1 kHz
9.5
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.4
pA/√Hz
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the 40°C to +25°C delta and the +25°C to +125°C delta.
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