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參數(shù)資料
| 型號(hào)： | OP249 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Dual, Precision JFET High Speed Operational Amplifier |
| 中文描述： | 雙路，高速精密JFET運(yùn)算放大器 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 702K |
| 代理商： | OP249 |
–2–
REV. C
OP249–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Symbol Conditions
OP249A
Min
Typ
OP249E
Min
Typ
OP249F
Min
Parameter
Max
Max
Typ
Max
Units
Offset Voltage
Long Term Offset Voltage
Offset Stability
Input Bias Current
Input Offset Current
Input Voltage Range
V
OS
V
OS
0.2
0.5
0.8
0.1
0.3
0.6
0.2
0.7
1.0
mV
mV
μ
V/Month
pA
pA
V
V
V
dB
μ
V/V
V/mV
V
V
V
mA
mA
mA
mA
V/
μ
s
MHz
μ
s
Degrees
i
pF
μ
V p-p
nV/
√
Hz
nV/
√
Hz
nV/
√
Hz
nV/
√
Hz
pA/
√
Hz
V
(Note 1)
1.5
30
6
+12.5
1.5
20
4
+12.5
1.5
30
6
+12.5
I
B
I
OS
IVR
V
CM
= 0 V, T
J
= +25
°
C
V
CM
= 0 V, T
J
= +25
°
C
(Note 2)
75
25
50
15
75
25
±
11
±
11
±
11
–12.5
90
12
–12.5
95
9
–12.5
90
12
1200
+12.5
Common-Mode Rejection
Power-Supply Rejection Ratio
Large-Signal Voltage Gain
Output Voltage Swing
CMR
PSRR
A
VO
V
O
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
V
O
=
±
10 V, R
L
= 2 k
1000 1400
R
L
= 2 k
80
86
80
31.6
31.6
50
1000 1400
500
+12.5
+12.5
±
12.0
±
12.0
±
12.0
–12.5
+36
–12.5
+36
–12.5
+36
Short-Circuit Current Limit
I
SC
Output Shorted to
Ground
±
20
±
50
±
20
±
50
±
20
±
50
–33
5.6
22
4.7
0.9
55
10
12
i
6
35
2
75
26
17
16
0.003
±
15
–33
5.6
22
4.7
0.9
55
10
12
i
6
35
2
75
26
17
16
0.003
±
15
–33
5.6
22
4.7
0.9
55
10
12
i
6
35
2
75
26
17
16
0.003
±
15
Supply Current
Slew Rate
Gain-Bandwidth Product
Settling Time
Phase Margin
Differential Input Impedance
Open-Loop Output Resistance R
O
Voltage Noise
Voltage Noise Density
I
SY
SR
GBW
t
S
θ
0
Z
IN
No Load, V
O
= 0 V
R
L
= 2 k
, C
L
= 50 pF
(Note 4)
10 V Step 0.01%
3
0 dB Gain
7.0
7.0
7.0
18
3.5
18
3.5
18
3.5
1.2
1.2
1.2
e
n
p-p
e
n
0.1 Hz to 10 Hz
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
f
O
= 10 kHz
f
O
= 1 kHz
Current Noise Density
Voltage Supply Range
i
n
V
S
±
4.5
±
18
±
4.5
±
18
±
4.5
±
18
NOTES
1
Long-term offset voltage is guaranteed by a 1000 HR life test performed on three independent wafer lots at +125
°
C with LTPD of three.
2
Guaranteed by CMR test.
3
Settling time is sample tested.
4
Guaranteed by design.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V
S
=
6
15 V, T
A
= +25
8
C, unless otherwise noted)
OP249G
Min
Parameter
Symbol
Conditions
Typ
Max
Units
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
V
OS
I
B
I
OS
IVR
0.4
40
10
+12.5
0.2
75
25
mV
pA
pA
V
V
V
dB
μ
V/V
V/mV
V
V
V
mA
mA
mA
mA
V/
μ
s
MHz
μ
s
Degree
i
pF
V
CM
= 0 V, T
J
= +25
°
C
V
CM
= 0 V, T
J
= +25
°
C
(Note 1)
±
11
–12.0
90
12
1100
+12.5
Common-Mode Rejection
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Swing
CMR
PSRR
A
VO
V
O
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
V
O
=
±
10 V; R
L
= 2 k
R
L
= 2 k
76
50
500
±
12.0
–12.5
+36
Short-Circuit Current Limit
I
SC
Output Shorted to Ground
±
20
±
50
–33
5.6
22
4.7
0.9
55
10
12
i
6
Supply Current
Slew Rate
Gain Bandwidth Product
Settling Time
Phase Margin
Differential Input Impedance
I
SY
SR
GBW
t
S
θ
0
Z
IN
No Load; V
O
= 0 V
R
L
= 2 k
, C
L
= 50 pF
(Note 2)
10 V Step 0.01%
0 dB Gain
7.0
18
1.2
(@ V
S
=
6
15 V, T
A
= +25
8
C, unless otherwise noted)
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