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參數(shù)資料
| 型號： | OP750C |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個基極-發(fā)射極電阻,集電極電流2.8mA) |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 438K |
| 代理商： | OP750C |
Types OP750A, OP750B, OP750C, OP750D
Elec ri cal Char ac er s ics
(T
A
= 25
o
C un ess oth er wise noted)
SYM BOL
PA RAME TER
MIN
TYP
MAX
UNITS
TEST CON DI TIONS
V
CE
= 5 V, E
e
= 1 mW/cm
2(3)
I
C(ON)
On-State Collector Current
OP750A
OP750B
OP750C
OP750D
2.25
1.50
0.85
0.85
7.00
4.20
2.80
7.00
mA
E
KP
Knee Point Irradiance
.03
mW/cm
2
V
CE
= 5 V
(4)
I
CEO
Collector-Emitter Dark Current
100
nA
V
CE
= 10 V, E
e
= 0
I
ECO
Emitter-Reverse Current
100
μ
A
V
EC
= 0.4 V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
I
C
= 100
μ
A
I
C
= 100
μ
A, E
e
= 1 mW/cm
2(3)
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.4
V
Typi cal Per orm ance Curves
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
8
Normalized Collector Current
vs. Angular Displacement
q
- Angluar Displacement - Deg.
Normalized Light and Dark
Current vs. Ambient Temperature
E
e
- Irradiance - mW/cm
2
On-State Collector Current
vs. Irradiance
Normalized Output vs.
Frequency
OP550
OP750
V
= 5 V
LED:
l
= 935 nm
RL = 1K
W
RL = 10K
W
R
L
- Load Resistance - K
W
Typical Rise and Fall Time vs.
Load Resistance
VCC = 5 V
VRL = 1 V
f = 100 Hz
PW = 1mS
Test Conditions:
Light source is pulsed LED with tr
and tf
￡
500 ns.
IF is adjusted for VOUT = 1 Volt.
Switching Time
Test Circuit
120
105
90
75
60
45
30
15
0
T
A
- Ambient Temperature -
°
C
100
10
1
.1
.01
.001
.0001
1
.1
10
.01
.00001
.001
1000
100
10
Frequency - KHz
0.0
1
0.5
1.0
Light Current
Dark Current
V
R
= 1 V
V
CE
= 5 V
50% Duty Cycle
LED:
l
= 935 nm
0
2
4
6
8
10
LED = GaAIAs,
l
= 890 nm
VRL is voltage across RL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP750D | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個基極-發(fā)射極電阻,集電極電流7.0mA) |
| OP755A | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個基極-發(fā)射極電阻,集電極電流5.50mA) |
| OP755B | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個基極-發(fā)射極電阻,集電極電流3.40mA) |
| OP755D | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個基極-發(fā)射極電阻,集電極電流5.50mA) |
| OP755C | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個基極-發(fā)射極電阻,集電極電流2.25mA) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP750D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755A | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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