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參數(shù)資料
| 型號(hào)： | OP755A |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個(gè)基極-發(fā)射極電阻,集電極電流5.50mA) |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 511K |
| 代理商： | OP755A |
Types OP755A, OP755B, OP755C, OP755D
Op ek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972)323- 2200 Fax (972)323- 2396
10
Elec ri cal Char ac er s ics
(T
A
= 25
o
C un ess oth er wise noted)
SYM BOL
PA RAME TER
MIN
TYP MAX UNITS
TEST CON DI TIONS
V
CE
= 5 V, E
e
= 1.0 mW/cm
2(3)
I
C(ON)
On-State Collector Current
OP755A
OP755B
OP755C
OP755D
1.80
1.20
0.70
0.70
5.50
3.40
2.25
5.50
mA
E
KP
Knee Point Irradiance
.2
mW/cm
2
V
CE
= 5 V
(4)
I
CEO
Collector-Emitter Dark Current
100
nA
V
CE
= 10 V, E
e
= 0
V
CE
= 0.4 V
I
ECO
Emitter-Reverse Current
100
m
A
V
(BR)CEO
Collector-Emitter Breakdown
30
V
I
C
= 100
m
A
I
C
= 100
m
A, E
e
= 1 mW/cm
2(3)
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.4
V
Typi cal Per orm ance Curves
q
- Angular Displacement - Deg.
Normalzied Light and Dark Current
vs. Ambient Temperature
T
A
- Ambient Temperature -
°
C
Switching Time
Test Circuit
On-State Collector Current
vs. Irradiance
E
e
- Irradiance - mW/cm2
Test Conditions:
Light source is pulsed LED with tr
and tf
￡
500 ns.
IF is adjusted for VOUT = 1 Volt.
Normalized Collector Current vs.
Angular Displacement
Dark Current
VCE = 5 V
OP555
OP755
Frequency - KHz
Normalized Output
vs. Frequency
R
L
= Load Resistance - K
W
Typical Rise and Fall Time
vs. Load Resistance
VCC = 5 V
VRL = 1 V
f = 100 Hz
PW = 1mS
RL = 10K
W
RL =
Light Current
1.0
0.5
0.0
1
10
100
1000
2
4
6
8
10
100
10
1
.1
.01
.001
.0001
.00001
.001
.01
.1
1
10
120
105
90
75
60
45
30
15
0
0
V
RL
= 1 V
V
CE
= 5 V
50% Duty Cycle
LED:
l
= 935 nm
LED = GaAIAs,
l
= 890 nm
VRL is voltage across RL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP755B | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個(gè)基極-發(fā)射極電阻,集電極電流3.40mA) |
| OP755D | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個(gè)基極-發(fā)射極電阻,集電極電流5.50mA) |
| OP755C | NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個(gè)基極-發(fā)射極電阻,集電極電流2.25mA) |
| OP800A | NPN SILICON PHOTOTRANSISTORS |
| OP800B | NPN SILICON PHOTOTRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP755B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP755D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP760A | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP760B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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