參數(shù)資料
型號： P0080EARP2
英文描述： MCU CMOS 44 LD 10MHZ 4K EPRM, -40C to +125C, 44-PLCC, TUBE
中文描述： SIDAC的| 25V的五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 119/161頁
文件大?。?/td> 986K
代理商： P0080EARP2
SIDACtor
Data Book
Construction and Operation
Teccor Electronics
(972) 580-7777
5 - 3
T
Overview
SIDACtors are thyristor devices used to protect sensitive circuits from electrical
disturbances caused by lightning and AC power cross conditions. The unique structure
and characteristics of the thyristor are used to create an over-voltage protection device
with precise and repeatable turn-on characteristics with low voltage overshoot and
high surge current capabilities.
Key Parameters
Key parameters for SIDACtors are V
DRM
, I
DRM
, V
S
, I
H
, and V
T
. V
DRM
is the repetitive
peak off-state voltage rating of the device (also know as stand-off voltage) and is the
continuous peak combination of AC and DC voltage that may be applied to the
SIDACtor in its off-state condition. I
DRM
is the maximum value of leakage current that
results from the application of V
DRM
. Switching voltage (V
S
) is the maximum voltage
that subsequent components may be subjected to during a fast rising (100V/μs) over-
voltage condition. Holding current (I
H
) is the minimum current required to maintain the
device in the on-state. And on-state voltage (V
T
) is the maximum voltage across the
device during full conduction.
Figure 5-1 V-I Characteristics
Operation
The SIDACtor operates much like a switch. In the off-state, the device exhibits leakage
currents (I
DRM
) less than 5μA making it invisible to the circuit it is protecting. As a
transient voltage exceeds the SIDACtors V
DRM
, the device will begin to enter its
protective mode with characteristics similar to an avalanche diode. When supplied with
enough current (I
S
), the SIDACtor will switch to an on-state, shunting the surge from
the circuit it is protecting. While in the on-state, the SIDACtor is able to sink large
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
相關(guān)PDF資料
PDF描述
P0080EB MCU CMOS 44 LD 10MHZ 4K EPRM, -40C to +85C, 44-PLCC, TUBE
P0080EBRP1 MCU CMOS 44 LD 10MHZ 4K EPRM, -40C to +85C, 44-MQFP, TRAY
P0080EBRP2 MCU CMOS 40 LD 20MHZ 4K EPRM, 0C to +70C, 40-PDIP, TUBE
P0080EC SIDAC|25V V(BO) MAX|800MA I(S)|TO-92VAR
P0080ECRP1 MCU CMOS 40 LD 20MHZ 4K EPRM, -40C to +125C, 40-PDIP, TUBE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P0080EB 功能描述:硅對稱二端開關(guān)元件 100A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBAP 功能描述:硅對稱二端開關(guān)元件 100A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBL 功能描述:硅對稱二端開關(guān)元件 6V 100A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBLAP 功能描述:硅對稱二端開關(guān)元件 6V 100A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBLRP1 功能描述:硅對稱二端開關(guān)元件 6V 100A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*