參數(shù)資料
型號： P0080EARP2
英文描述： MCU CMOS 44 LD 10MHZ 4K EPRM, -40C to +125C, 44-PLCC, TUBE
中文描述： SIDAC的| 25V的五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 123/161頁
文件大?。?/td> 986K
代理商： P0080EARP2
SIDACtor
Data Book
Fuse Selection Criteria
Teccor Electronics
(972) 580-7777
5 - 7
T
8$
Because fuses are rated in terms of continuous voltage and current carrying capacity,
it is often difficult to translate this information in terms of peak pulse current ratings. In
an attempt to simplify this process, Teccor has worked with several fuse manufacturers
to compile Table 5-1.
Table 5-1:
Notes:
1. The I
PP
ratings apply to a 2AG slow blow fuse only.
2. Because there is a high degree of variance in the fusing characteristics, the I
PP
ratings listed should only be
used as approximations.
When selecting a fuse the following criteria should be used:
Peak Pulse Current (I
PP
)
For circuits that do not require additional series resistance, the surge current rating
(I
PP
) of the fuse should be greater than or equal to the surge currents associated with
the lightning immunity tests of the applicable regulatory requirement (I
PK
).
I
PP
≥
I
PK
For circuits that utilize additional series resistance, the surge current rating (I
PP
) of the
fuse should be greater than or equal to the
available
surge currents associated with
the lightning immunity tests of the applicable regulatory requirement (I
PK(available)
).
I
PP
≥
I
PK(available)
The maximum available surge current is calculated by dividing the peak surge voltage
(V
PK
) by the total circuit resistance (R
TOTAL
).
I
PK(available)
= V
PK
/R
TOTAL
For longitudinal surges (TIP-GND, RING-GND), R
TOTAL
is calculated for both Tip and Ring.
R
SOURCE
= V
PK
/I
PK
R
TOTAL
= R
TIP
+ R
SOURCE
R
TOTAL
= R
RING
+ R
SOURCE
For metallic surges (TIP-RING):
R
SOURCE
= V
PK
/I
PK
R
TOTAL
= R
TIP
+ R
RING
+ R
SOURCE
Equivalent I
PP
Rating
10X560μs
(A)
15
25
30
35
45
65
85
115
Fuse Rating
(mA)
250
350
400
500
600
750
1000
1250
10X160μs
(A)
30
45
50
65
75
90
130
160
10X1000μs
(A)
10
20
25
30
35
50
65
100
相關(guān)PDF資料
PDF描述
P0080EB MCU CMOS 44 LD 10MHZ 4K EPRM, -40C to +85C, 44-PLCC, TUBE
P0080EBRP1 MCU CMOS 44 LD 10MHZ 4K EPRM, -40C to +85C, 44-MQFP, TRAY
P0080EBRP2 MCU CMOS 40 LD 20MHZ 4K EPRM, 0C to +70C, 40-PDIP, TUBE
P0080EC SIDAC|25V V(BO) MAX|800MA I(S)|TO-92VAR
P0080ECRP1 MCU CMOS 40 LD 20MHZ 4K EPRM, -40C to +125C, 40-PDIP, TUBE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P0080EB 功能描述:硅對稱二端開關(guān)元件 100A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBAP 功能描述:硅對稱二端開關(guān)元件 100A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBL 功能描述:硅對稱二端開關(guān)元件 6V 100A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBLAP 功能描述:硅對稱二端開關(guān)元件 6V 100A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EBLRP1 功能描述:硅對稱二端開關(guān)元件 6V 100A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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