- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367627 > P1100EB MCU CMOS 18LD 2K FLASH, -40C to +85C, 18-PDIP, TUBE PDF資料下載
參數(shù)資料
| 型號： | P1100EB |
| 英文描述： | MCU CMOS 18LD 2K FLASH, -40C to +85C, 18-PDIP, TUBE |
| 中文描述： | SIDAC的| 130V五（公報）最大| 800mA的我（縣）|對92VAR |
| 文件頁數(shù)： | 125/161頁 |
| 文件大?。?/td> | 986K |
| 代理商： | P1100EB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁當(dāng)前第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁第161頁
SIDACtor
Data Book
Over-Voltage Protection Comparison
Teccor Electronics
(972) 580-7777
5 - 9
T
Applications
Although MOV
’
s are restricted from being used in many telecom applications (other
than disposable equipment), they are useful in AC applications where a clamping
device is required and tight voltage tolerances are not.
TVS Diodes
Overview
TVS diodes are clamping voltage suppressors that are constructed with back-to-back
PN junctions. During conduction, TVS diodes create a low impedance path by varying
their resistance as voltage is applied across their terminals. Once the voltage is
removed, the diode will turn off and return to its high off-state impedance.
Advantages
Because TVS diodes are solid state devices, they do not fatigue nor do their electrical
parameters change as long as they are operated within their specified limits. TVS
diodes effectively clamp fast rising transients and are well suited for low voltage
applications that do not require large amounts of energy to be shunted.
Restrictions
Because TVS diodes are clamping devices, they have two inherent weaknesses. The
first is that TVS diodes are both voltage and current limited, so careful consideration
should be given to using these in applications that require large amounts of energy to
be shunted. The second is that as the amount of current flowing through the device
increases, so does its maximum clamping voltage.
Applications
Due to their low power ratings, TVS diodes are not used as primary interface
protectors across Tip and Ring; they are used as secondary protectors that are
embedded within a circuit.
SIDACtors
Overview
A SIDACtor is a PNPN device that can be thought of as a TVS diode with a gate. Upon
exceeding its peak off-state voltage (V
DRM
), a SIDACtor will clamp a transient voltage
to within the devices switching voltage (V
S
) rating. Then, once the current flowing
through the SIDACtor exceeds its switching current, the device will crowbar and
simulate a short circuit condition. Once the current flowing through the SIDACtor is
less than the devices holding current (I
H
), the SIDACtor will reset and return to its high
off-state impedance.
Advantages
Advantages of the SIDACtor include its fast response time (Figure 5-3), stable
electrical characteristics, long term reliability, and low capacitance. Also, because the
SIDACtor is a crowbar device, it can not be damaged by voltage and it has extremely
high surge current ratings.
Restrictions
Because the SIDACtor is a crowbar device, it can not be used directly across the AC
line; it must be placed behind a load. Failing to do so will result in exceeding the
SIDACtors surge current rating which may cause the device to enter a permanent
short circuit condition.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P1100EBRP1 | MCU CMOS 18LD 2K FLASH, -40C to +85C, 20-SSOP 208mil, TUBE |
| P1300EARP2 | SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR |
| P1300EB | SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR |
| P1300EBRP1 | SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR |
| P1300EBRP2 | SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P1100EBL | 功能描述:硅對稱二端開關(guān)元件 100A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| P1100EBLAP | 功能描述:硅對稱二端開關(guān)元件 100A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| P1100EBLRP1 | 功能描述:硅對稱二端開關(guān)元件 100A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| P1100EBLRP2 | 功能描述:硅對稱二端開關(guān)元件 100A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| P1100EBLXXX | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:SIDACtor? Series TO-92 are designed to protect baseband equipment |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。