參數(shù)資料
型號: P12152EJ3V0AN00
英文描述: uPC1678G/1678GV/1679G. uPC2708T to 2710T. uPC2762T/2763T. uPC2771T/2776T Silicon Medium-Power High-Frequency Amplifier MMIC
中文描述: uPC1678G/1678GV/1679G。 uPC2708T到2710T。 uPC2762T/2763T。 uPC2771T/2776T硅中功率高頻單片放大器
文件頁數(shù): 18/35頁
文件大?。?/td> 291K
代理商: P12152EJ3V0AN00
Application Note P12152EJ3V0AN00
18
4.2
P
PC2709T
To judge the characteristics of the
P
PC2709T, it was compared with the
P
PC2776T, which has similar electric
characteristics, using a 10 nH wire-wound type chip inductor (1 GHz self-resonance frequency). The results of the
P
PC2709T and
P
PC2776T are shown in Figures 4-4 and 4-5, respectively. The
P
PC2709T shows flat gain
characteristics in the range from 1 GHz to 2.5 GHz. The
P
PC2776T shows a gain decline at 2.0 GHz and higher.
This is because in the
P
PC2709T the peaking capacitances of the input/output stages are connected to the output
pin and the peaking frequency tends to shift to high frequency due to the value of the inductor externally connected
to the output pin whereas in the
P
PC2776T, the gain at high frequency is little affected because only the peaking
capacitance is connected only to the output stage. Expressed a different way, the
P
PC2776T has smaller variations.
Figure 4-4. Frequency Characteristics of
P
PC2709T Using 10 nH Inductor
(Conditions: T
A
= +25
q
C, V
CC
= V
out
= 5.0 V, Z
S
= Z
L
= 50
:
)
Frequency f (GHz)
(a) Power Gain vs. Frequency
(d) Output Return Loss vs. Frequency
P
P
0.1
16
14
18
20
22
24
3.0
Frequency f (GHz)
O
o
50
40
30
20
10
0
0.1
3.0
3
3
5
4
4
:100 MHz
:1.0 GHz
:2.0 GHz
:2.5 GHz
:3.0 GHz
1
2
3
4
5
2
1
5
2
(c) Input Return Loss vs. Frequency
0.1
40
50
30
20
10
0
3.0
Frequency f (GHz)
I
i
5
4
1
2
3
(b) Isolation vs. Frequency
0.1
3.0
Frequency f (GHz)
I
50
40
30
20
10
0
2
3
4
5
1
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