參數(shù)資料
型號： P1500ECRP2
英文描述： MCU CMOS 18 LD 4MHZ .5K FLASH, 0C to +70C, 18-PDIP, TUBE
中文描述： SIDAC的| 180V五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 130/161頁
文件大小： 986K
代理商： P1500ECRP2
PCB Layout
SIDACtor
Data Book
5 - 14
Teccor Electronics
(972) 580-7777
The minimum width and thickness of conductors on a PCB is determined primarily by
the current-carrying capacity required. This current carrying capacity is limited by the
allowable temperature rise of the etched copper conductor. An adjacent ground or
power layer can significantly reduce this temperature rise. A single ground plane can
generally raise the allowed current by 50 percent. An easy approximation can be
generated by starting with Figure 5-4 to calculate the conductor cross sectional area
required. Once this has been done, Figure 5-5 converts the cross sectional area to the
required conductor width dependent on the copper foil thickness of the trace.
Figure 5-5 Conductor Width vs. Area
Trace Separation
Because Tip and Ring traces are subjected to transient conditions, they should be
routed towards the edge of the PCB away from sensitive areas, and should maintain a
minimum separation of 2.5mm between themselves and other traces. A good rule of
thumb for separation of non-coated top layer traces is to maintain spacing equal to
.010mm per volt.
Grounding
Although often overlooked, grounding is a very important design consideration when
laying out a protection interface circuit. To optimize its effectiveness, several things
should be considered.
The first is that a large copper plane should be provided using a grid pattern for the
ground reference point.
Next, it should be decided if a single point or a multi point grounding scheme is to be
used. A single-point (also called centralized) grounding scheme is used for circuit
dimensions smaller than one-tenth of a wavelength (
λ
= 300,000/F
kHz
) and a multi
point (also called distributed) grounding scheme is used for circuit trace lengths
0
.350
.300
.250
.030
.050
.070
.100
.150
.200
.010
.020
.005
.001
0
1
10
20
100 150
300
400
500
600
700
Conductor Cross-Section Area (sq mils)
5
30 50 70
200
250
C
0
"
7
0
0
0
2
t
o
2
"
4
1
0
0
2
t
o
1
(2oz/ft2 .0028"
(3oz/ft2) .0042"
相關(guān)PDF資料
PDF描述
P1500SARP MCU CMOS 18 LD 4MHZ .5K FLASH, -40C to +85C, 18-SOIC 300mil, TUBE
P1500SBRP MCU CMOS 18 LD 10MHZ .5K FLASH, -40C to +85C, 18-PDIP, TUBE
P1500SCRP MCU CMOS 18 LD LOW PWR, 0C to +70C, 18-SOIC 300mil, TUBE
P1602ABRP MCU CMOS 18 LD LOW PWR, -40C to +85C, 18-PDIP, TUBE
P1602AC MCU CMOS 18 LD LOW PWR, -40C to +85C, 18-SOIC 300mil, TUBE
相關(guān)代理商/技術(shù)參數(shù)
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P1500GALRP 功能描述:硅對稱二端開關(guān)元件 140V 50A DO15 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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P1500JTL 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Standard silicon rectifier diodes
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