參數(shù)資料
型號(hào)： P1602ACRP
英文描述： MCU CMOS 18 LD LOW PWR, 0C to +70C, 18-SOIC 300mil, T/R
中文描述： SIDAC的| 95V V（下公報(bào)）最大| 800mA的我（縣）|對(duì)220VAR
文件頁數(shù)： 16/161頁
文件大?。?/td> 986K
代理商： P1602ACRP
Electrical Parameters Defined
SIDACtor
Data Book
1 - 6
Teccor Electronics
(972) 580-7777
C
O
- Off-state Capacitance
Typical capacitance measured in off-state.
dI/dt - Rate of Rise of Current
Maximum rated value of the acceptable rate of rise in current over time.
dV/dt - Rate of Rise of Voltage
Rate of applied voltage over time.
I
S
- Switching Current
Maximum current required to switch to on-state.
I
DRM
- Leakage Current
Maximum peak off-state current measured at V
DRM.
I
H
- Holding Current
Minimum current required to maintain on-state.
I
PP
- Peak Pulse Current
Maximum rated peak impulse current.
I
T
- On-state Current
Maximum rated continuous on-state current.
I
TSM
- Peak One Cycle Surge Current
Maximum rated one cycle AC current.
V
S
- Switching Voltage
Maximum voltage prior to switching to on-state.
V
DRM
- Peak off-state Voltage
Maximum voltage that can be applied while maintaining off-state.
V
F
- On-state Forward Voltage
Maximum forward voltage measured at rated on-state current.
V
T
- On-state Voltage
Maximum voltage measured at rated on-state current.
NOTE:
On-state is defined as the low impedance condition reached during full
conduction. It is also referred to as the crowbar condition and simulates a short
circuit.
Off-state is defined as the high impedance condition prior to beginning
conduction. It is also referred to as the blocking condition and simulates an
open circuit.
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P1800SARP SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA
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