參數(shù)資料
型號： P2300EB
英文描述： MCU CMOS 44 LD 25MHZ 4K EPRM, 0C to +70C, 44-TQFP, TRAY
中文描述： SIDAC的| 260伏特五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 84/161頁
文件大?。?/td> 986K
代理商： P2300EB
GR 1089-Core
SIDACtor
Data Book
4 - 10
Teccor Electronics
(972) 580-7777
At no time will the short circuit exceed 1 ohm. For equipment with more than one
twisted pair, the short circuit will be applied to all twisted pair simultaneously. To
comply with the short circuit test, the EUT must function normally after the short-circuit
condition has been applied and a fire hazard may not be present.
Intra-Building Lightning and AC Power Fault Test
Not all equipment is intended to be off premise equipment nor is all equipment
intended to interface with the telephone outside plant. For such equipment, the EUT
need only meet the Intra-Building Lightning Surge Test found in Table 4-8 and the
Intra-Building AC Power Fault Test found in Table 4-9.
Table 4-8 Intra-Building Lightning Surge Test
Surge Current
per Conductor
(A)
Note:
The EUT shall not be damaged and shall continue to operate. Because the intensity of
the Intra-Building Tests are much less than those found in Table 4-2 through
Table 4-6, if the EUT only meets the criteria found in Table 4-8 and 4-9, documentation
must be included indicating that the equipment is solely intended for intra-building
(non-exposed wiring) connections.
Table 4-9 Second Level Intra-Building AC Power Fault Test
Short Circuit
Current per Line
Conductor
(A)
120
25
Note:
For EUT containing secondary voltage limiting and current limiting protectors, tests are
to be performed at the indicated voltage(s) and repeated at a reduced voltage and
current just below the operating threshold of the secondary protectors. This second
level test may be destructive but shall not become a fire, fragmentation or electrical fire
hazard.
Test
Surge
Voltage
(V
PK
)
± 800
Wave-form
Repetitions Each
Polarity
Test Connections
(Table 4-1, Fig. 4-1)
1
2x10μs
100
1
A
2
± 1500
2x10μs
100
1
B
Test
Applied
Voltage, 60Hz
(V
RMS
)
Duration
Primary
Protectors
Test Connections
(Table 4-1, Fig. 4-1)
1
15 minutes
Removed
A
相關(guān)PDF資料
PDF描述
P2300EBRP1 MCU CMOS 44 LD 25MHZ 4K EPRM, -40C to +85C, 44-TQFP, TRAY
P2300EBRP2 MCU CMOS 44 LD 33MHZ 4K EPRM, 0C to +70C, 44-MQFP, TRAY
P2300EC MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to +85C, 44-PLCC, TUBE
P2300ECRP1 MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to +85C, 44-TQFP, TRAY
P2300ECRP2 MCU CMOS 44LD 16 MHz EPRM, -40C to +85C, 44-TQFP, T/R
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P2300EBL 功能描述:硅對稱二端開關(guān)元件 100A 190V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2300EBLAP 功能描述:硅對稱二端開關(guān)元件 100A 190V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2300EBLRP1 功能描述:硅對稱二端開關(guān)元件 100A 190V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2300EBLRP2 功能描述:硅對稱二端開關(guān)元件 100A 190V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2300EBLXXX 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:SIDACtor? Series TO-92 are designed to protect baseband equipment
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