參數(shù)資料
型號: P2353AA
英文描述: MCU CMOS 68 LD 33MHZ 8K EPRM, 0C to +70C, 68-PLCC, TUBE
中文描述: SIDAC的| 270V的五(公報)最大| 800mA的我(縣)|對220VAR
文件頁數(shù): 16/161頁
文件大?。?/td> 986K
代理商: P2353AA
Electrical Parameters Defined
SIDACtor
Data Book
1 - 6
Teccor Electronics
(972) 580-7777
C
O
- Off-state Capacitance
Typical capacitance measured in off-state.
dI/dt - Rate of Rise of Current
Maximum rated value of the acceptable rate of rise in current over time.
dV/dt - Rate of Rise of Voltage
Rate of applied voltage over time.
I
S
- Switching Current
Maximum current required to switch to on-state.
I
DRM
- Leakage Current
Maximum peak off-state current measured at V
DRM.
I
H
- Holding Current
Minimum current required to maintain on-state.
I
PP
- Peak Pulse Current
Maximum rated peak impulse current.
I
T
- On-state Current
Maximum rated continuous on-state current.
I
TSM
- Peak One Cycle Surge Current
Maximum rated one cycle AC current.
V
S
- Switching Voltage
Maximum voltage prior to switching to on-state.
V
DRM
- Peak off-state Voltage
Maximum voltage that can be applied while maintaining off-state.
V
F
- On-state Forward Voltage
Maximum forward voltage measured at rated on-state current.
V
T
- On-state Voltage
Maximum voltage measured at rated on-state current.
NOTE:
On-state is defined as the low impedance condition reached during full
conduction. It is also referred to as the crowbar condition and simulates a short
circuit.
Off-state is defined as the high impedance condition prior to beginning
conduction. It is also referred to as the blocking condition and simulates an
open circuit.
相關(guān)PDF資料
PDF描述
P2353AARP SIDAC|270V V(BO) MAX|800MA I(S)|TO-220VAR
P2353AB MCU CMOS 64 LD 33MHZ 8K EPRM, -40C to +85C, 64-TQFP, TRAY
P2353ABRP MCU CMOS 64 LD 16MHZ 8K EPRM, -40C to +85C, 64-TQFP, T/R
P2353AC MCU CMOS 64 LD LOW PWR, 0C to +70C, 64-TQFP, TRAY
P2353ACRP MCU CMOS 64 LD LOW PWR, -40C to +85C, 64-TQFP, TRAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P2353AA_ 功能描述:硅對稱二端開關(guān)元件 USE 576-P2353AA RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AA60 功能描述:硅對稱二端開關(guān)元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AAL 功能描述:硅對稱二端開關(guān)元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AAL60 功能描述:硅對稱二端開關(guān)元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AALRP 功能描述:硅對稱二端開關(guān)元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA