參數(shù)資料
型號： P2353AA
英文描述： MCU CMOS 68 LD 33MHZ 8K EPRM, 0C to +70C, 68-PLCC, TUBE
中文描述： SIDAC的| 270V的五（公報）最大| 800mA的我（縣）|對220VAR
文件頁數(shù)： 86/161頁
文件大?。?/td> 986K
代理商： P2353AA
ITU-T K.20 and K.21
SIDACtor
Data Book
4 - 12
Teccor Electronics
(972) 580-7777
External Protectors
For equipment being tested to the exposed level, it is standard practice for external
line protectors (typically gas tubes) to be used in order to handle the large surge
currents generated during K.20 and K.21 qualification. Realizing that these protectors
can affect the characteristics of the EUT, it is important that the protectors used be
agreed upon by the principal parties involved (the equipment supplier and testing
administrator). Once agreed upon, the protectors should be used when primary
protection is specified, and allowance should be given for a new set of protectors after
the completion of each test sequence.
Note:
An alternative to using external protectors is for the test administrator to simulate the
conditions expected (as if the external protectors were used) by modifying the surges
found in K.20 and K.21.
Equipment Boundaries
Because of the numerous types of equipment, during K.20 and K.21 testing ITU-T
looks at each EUT as a
“
black box
”
with three terminals (A, B, and E). The applicant is
expected to define the boundaries of this
“
black box
”
, and in doing so, should be aware
that any protective device within these boundaries is considered an unchangeable part
of that piece of equipment.
Permitted Malfunction or Damage
During K.20 and K.21 qualification, ITU-T recognizes two levels of malfunction or
damage to the EUT:
Level A states that equipment withstands the test without damage or disturbance
and operates properly after the test. If specifically permitted, the administration
may accept the opening of the fuse.
Level B states that a fire hazard does not occur in the equipment as a result of the
test, and that any permanent damage or malfunction is confined to a small number
of external line interface circuits (as defined by the test administrator).
The acceptable level of malfunction for each test is specified under Acceptance
Criteria.
相關PDF資料
PDF描述
P2353AARP SIDAC|270V V(BO) MAX|800MA I(S)|TO-220VAR
P2353AB MCU CMOS 64 LD 33MHZ 8K EPRM, -40C to +85C, 64-TQFP, TRAY
P2353ABRP MCU CMOS 64 LD 16MHZ 8K EPRM, -40C to +85C, 64-TQFP, T/R
P2353AC MCU CMOS 64 LD LOW PWR, 0C to +70C, 64-TQFP, TRAY
P2353ACRP MCU CMOS 64 LD LOW PWR, -40C to +85C, 64-TQFP, TRAY
相關代理商/技術參數(shù)
參數(shù)描述
P2353AA_ 功能描述:硅對稱二端開關元件 USE 576-P2353AA RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AA60 功能描述:硅對稱二端開關元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AAL 功能描述:硅對稱二端開關元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AAL60 功能描述:硅對稱二端開關元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P2353AALRP 功能描述:硅對稱二端開關元件 3Chp 200V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
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