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參數(shù)資料
| 型號(hào)： | P2503BDG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 286K |
| 代理商： | P2503BDG |
1
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
12
Continuous Drain Current
T
C
= 70 °C
I
D
10
Pulsed Drain Current
1
I
DM
30
A
T
C
= 25 °C
32
Power Dissipation
T
C
= 70 °C
P
D
22
W
Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
θ
J
c
3
°C / W
Junction-to-Ambient
R
θ
JA
75
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1
1.5
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±250
nA
V
DS
= 24V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
10
μ
A
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
30
25m
12A
G
D
S
1.GATE
2.DRAIN
3.SOURCE
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