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參數(shù)資料
| 型號(hào)： | P2503BDG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 286K |
| 代理商： | P2503BDG |
2
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
30
A
V
GS
= 4.5V, I
D
= 6A
25
37
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 12A
18
25
m
Forward Transconductance
1
g
fs
V
DS
= 5V, I
D
= 12A
19
S
DYNAMIC
Input Capacitance
C
iss
790
Output Capacitance
C
oss
175
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
C
rss
V
GS
= 0V, V
DS
= 10V, f = 1MHz
65
pF
Q
g
16
Q
gs
2.5
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 12A
2.1
nC
t
d(on)
2.2
4.4
t
r
7.5
15
t
d(off)
11.8
21.3
t
f
V
DD
= 10V
I
D
1A, V
GS
= 10V, R
GEN
= 6
3.7
7.4
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°
C)
Continuous Current
I
S
1.3
Pulsed Current
3
Forward Voltage
1
I
SM
2.6
A
V
SD
I
F
= 1A, V
GS
= 0V
1
V
1
Pulse test : Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2503BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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