參數(shù)資料
型號(hào)： P2600EARP2
英文描述： MCU CMOS 28 LD LOW PWR, -40C to +85C, 28-SPDIP, TUBE
中文描述： SIDAC的| 300V五（公報(bào)）最大| 800mA的我（縣）|對(duì)92VAR
文件頁數(shù)： 109/161頁
文件大?。?/td> 986K
代理商： P2600EARP2
SIDACtor
Data Book
UL 497B
Teccor Electronics
(972) 580-7777
4 - 35
R
R
5,#&<+
Overview
UL 497B provides requirements for protectors which are used in communication and
fire alarm circuits. All SIDACtors are evaluated against this standard as individual
components and are listed as UL 497B compliant devices under UL file No. E133083.
Construction and Performance
UL 497B is divided into two sections covering construction and performance
requirements. Table 4-22 lists the contents of each main section.
Table 4-22 UL497B
Performance Requirements Specific to the SIDACtor
1.
Strike Voltage Breakdown Test
- Protectors are required to breakdown within the
manufacturers specified breakdown range or within 10% of a nominal single
breakdown voltage rating (Figure 4-18).
2.
Endurance Conditioning
- Protectors are subjected to 50 impulse cycles. Each
cycle is a 1000V
PK
, 10A, 10x1000μs pulse. Pulses are applied in one polarity at
10 second intervals, and then repeated in the opposite polarity.
3.
Variable Ambient Conditioning
- Protectors must comply with the strike voltage
requirements after being subjected to an ambient temperature of 0
°
C for 4
hours and again after being subjected to an ambient temperature of 49
°
C for an
additional 4 hours.
4.
Discharge Test
- Protectors must comply with strike voltage requirements after
being subjected to five successive discharges from a 2μF capacitor charged to
1000V
DC
(Figure 4-19).
Construction
Performance
General
General
Corrosion protection
Strike Voltage Breakdown
Field-Wiring Connections
Endurance Conditioning
Components
Temperature Test
Spacing
Dielectric Voltage-Withstand test
Fuses
Vibration Conditioning
Jarring Test
Discharge Test
Repeated Discharge Test
Polymeric Materials Test
High Temperature Test
Marking
相關(guān)PDF資料
PDF描述
P2600EB SIDAC|300V V(BO) MAX|800MA I(S)|TO-92VAR
P2600EBRP1 MCU CMOS 28 LD 40MHZ 16K OTP, -40C to +85C, 28-SPDIP, TUBE
P2600EBRP2 MCU CMOS 28 LD 40MHZ 16K OTP, -40C to +85C, 28-SOIC 300mil, T/R
P2600EC MCU CMOS 28 LD LOW PWR, -40C to +85C, 28-SPDIP, TUBE
P2600ECRP1 MCU CMOS 40 LD 40MHZ 8K OTP, -40C to +85C, 40-PDIP, TUBE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P2600EB 功能描述:硅對(duì)稱二端開關(guān)元件 100A 220V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600EBL 功能描述:硅對(duì)稱二端開關(guān)元件 100A 220V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600EBLAP 功能描述:硅對(duì)稱二端開關(guān)元件 100A 220V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600EBLRP1 功能描述:硅對(duì)稱二端開關(guān)元件 100A 220V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600EBLRP2 功能描述:硅對(duì)稱二端開關(guān)元件 100A 220V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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