- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369939 > P28F002BC-T120 (INTEL CORP) 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | P28F002BC-T120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 120 ns, PDIP40 |
| 封裝： | PLASTIC, DIP-40 |
| 文件頁數(shù)： | 25/37頁 |
| 文件大小： | 455K |
| 代理商： | P28F002BC-T120 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
E
4.0
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
25
PRELIMINARY
ELECTRICAL SPECIFICATIONS
4.1
Absolute Maximum Ratings
Operating Temperature
During Read................................
0°C to +70°C
During Write and Block Erase...... 0°C to +70°C
Temperature Bias.................... –10°C to +80°C
Storage Temperature................... –65°C to +125°C
Voltage on Any Pin (except V
CC
, V
PP
, A
9
and RP#)
with Respect to GND............. –2.0V to +7.0V
(1)
Voltage on Pin RP# or Pin A
9
with Respect to GND........ –2.0V to +13.5V
(1, 2)
V
PP
Program Voltage
with Respect to GND during Write
and Block Erase .............. –2.0V to +14.0V
(1, 2)
V
CC
Supply Voltage
with Respect to GND............ –2.0V to +7.0V
(1)
Output Short Circuit Current.....................100 mA
(3)
NOTICE: This datasheet contains preliminary information on
new products in production. Do not finalize a design with
this information. Revised information will be published when
the product is available. Verify with your local Intel Sales
office that you have the latest datasheet before finalizing a
design.
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
NOTES:
1.
Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20
ns. Maximum DC voltage on input/output pins is V
CC
+ 0.5V which, during transitions, may overshoot to V
CC
+ 2.0V for
periods <20 ns.
Maximum DC voltage on V
may overshoot to +14.0V for periods <20 ns.
Maximum DC voltage on RP# or A
9
may
overshoot to 13.5V for periods <20 ns.
Output shorted for no more than one second.
No more than one output shorted at a time.
2.
3.
4.2
Operating Conditions
Table 6. Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
0
70
°C
V
CC
5V V
CC
Supply Voltage (10%)
4.50
5.50
Volts
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P28F002BC-T80 | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| P28F512-150 | 512K(64Kx8)CMOS FLASH MEMORY |
| P28F512-120 | 512K(64Kx8)CMOS FLASH MEMORY |
| P3000AA61 | solid state crowbar devices |
| P3104U | solid state crowbar devices |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P28F002BC-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| P28F010120 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| P28F010-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| P28F010150 | 制造商:INTEL 功能描述:* |
| P28F010-150 | 制造商:Intel 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。