參數資料
型號: P28F020-150
廠商: INTEL CORP
元件分類: PROM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁數: 24/38頁
文件大?。?/td> 878K
代理商: P28F020-150
28F020
E
24
4.6
DC Characteristics
—TTL/NMOS Compatible—Extended Temperature
Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
V
ID
A
Intelligent
Identifier
Voltage
11.50
13.0
0
V
I
ID
A
Intelligent
Identifier
Current
1, 2
90
500
μA
A
9
= V
ID
V
PPL
V
PP
during
Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Program
are Inhibited
when V
PP
= V
PPL
V
PPH
V
PP
during
Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write
Lock Voltage
2.5
V
4.7
DC Characteristics
—CMOS Compatible—Extended Temperature Products
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
LI
Input Leakage
Current
1
±1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or V
SS
I
LO
Output Leakage
Current
1
±10
μA
V
CC
= V
CC
Max
V
OUT
= V
CC
or
V
SS
I
CCS
V
CC
Standby
Current
1
50
100
μA
V
CC
= V
CC
Max
CE# = V
CC
±0.2 V
I
CC1
V
CC
Active Read
Current
1
10
50
mA
V
CC
= V
CC
Max
CE# = V
IL
f = 6 MHz
I
OUT
= 0 mA
I
CC2
V
CC
Programming
Current
1, 2
1.0
10
mA
Programming in
Progress
I
CC3
V
CC
Erase
Current
1, 2
5.0
30
mA
Erasure in
Progress
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