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參數(shù)資料
| 型號： | P3NB60FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| 中文描述： | ? -通道增強(qiáng)型MOSFET的PowerMESH |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 115K |
| 代理商： | P3NB60FP |
STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 3.3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
March 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NB60
STP3NB60FP
600
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
600
±
30
V
V
3.3
2.1
2.2
1.4
A
A
13.2
13.2
A
80
0.64
35
0.28
W
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
150
TYPE
V
DSS
R
DS(on)
<3.6
< 3.6
I
D
STP3NB60
STP3NB60FP
600 V
600 V
3.3 A
2.2 A
1/9
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