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| 型號： | PCF51AC256BCPUE |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 9/42頁 |
| 文件大小： | 0K |
| 描述： | MCU 8BIT 256K FLASH 64-LQFP |
| 標準包裝： | 160 |
| 系列： | MCF51AC |
| 核心處理器： | Coldfire V1 |
| 芯體尺寸： | 32-位 |
| 速度： | 50MHz |
| 連通性： | I²C，SCI，SPI |
| 外圍設備： | LVD，PWM，WDT |
| 輸入/輸出數(shù)： | 54 |
| 程序存儲器容量： | 256KB（256K x 8） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 32K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 數(shù)據(jù)轉換器： | A/D 20x12b |
| 振蕩器型： | 外部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 64-LQFP |
| 包裝： | 托盤 |
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Electrical Characteristics
MCF51AC256 ColdFire Microcontroller Data Sheet, Rev.7
Freescale Semiconductor
17
2
Electrical Characteristics
This section contains electrical specification tables and reference timing diagrams for the MCF51AC256
microcontroller, including detailed information on power considerations, DC/AC electrical characteristics,
and AC timing specifications.
The electrical specifications are preliminary and are from previous designs or design simulations. These
specifications may not be fully tested or guaranteed at this early stage of the product life cycle. These
specifications will, however, be met for production silicon. Finalized specifications will be published after
complete characterization and device qualifications have been completed.
NOTE
The parameters specified in this data sheet supersede any values found in
the module specifications.
2.1
Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the
customer a better understanding the following classification is used and the parameters are tagged
accordingly in the tables where appropriate:
NOTE
The classification is shown in the column labeled “C” in the parameter
tables where appropriate.
2.2
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not
guaranteed. Stress beyond the limits specified in Table 6 may affect device reliability or cause permanent
damage to the device. For functional operating conditions, refer to the remaining tables in this section.
This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD).
Table 5. Parameter Classifications
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically relevant
sample size across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted. All values shown in the typical column are within this
category.
D
Those parameters are derived mainly from simulations.
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