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參數(shù)資料
| 型號(hào)： | PDM41257LA10SOTR |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 256K X 1 STANDARD SRAM, 10 ns, PDSO24 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-24 |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大小： | 257K |
| 代理商： | PDM41257LA10SOTR |
PDM41257
Rev. 2.2 - 4/27/98
7
1
2
3
4
5
6
7
8
9
10
11
12
Low VCC Data Retention Waveform
Data Retention Electrical Characteristics (LA Version Only)
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
4. This parameter is sampled.
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured
±200 mV from steady state voltage.
6. VCC = 5V ± 5%.
Ordering Information
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDR
VCC for Retention Data
2—
—
V
ICCDR
Data Retention Current
CE
≥ V
CC – 0.2V
VIN ≥ VCC – 0.2V
or
≤ 0.2V
VCC = 2V
—
95
500
A
VCC = 3V
—
350
750
A
tCDR
Chip Deselect to Data Retention Time
0
—
ns
tR
(4)
Operation Recovery Time
tRC
——
ns
DON'T CARE
VCC
V
IH
IL
t CDR
V
t R
4.5V
Data Retention Mode
CE
DR
VDR
Device Type
Power
Speed
Package
Type
Process
Temp. Range
Preferred
Shipping
Container
Commercial (0
° to +70°C)
Industrial (–40
°C to +85°C)
7
Commercial Only
8
10
12
15
SA
Standard Power
LA
Low Power
Blank
I
A
Automotive ( –40
°C to +105°C)
Blank
Tubes
TR
Tape & Reel
TY
Tray
PDM41257 - 256K (256Kx1) Static RAM
XXXXX
X
XX
X
SO
24-pin 300-mil Plastic SOJ
Faster Memories for a Faster World
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