參數(shù)資料
型號(hào): PDTA124XS
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁(yè)數(shù): 4/14頁(yè)
文件大小: 93K
代理商: PDTA124XS
2004 Aug 04
4
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 22 k
, R2 = 47 k
PDTA124X series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 with 60
μ
m copper strip line.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PDTA124XE
PDTA124XEF
PDTA124XK
PDTA124XM
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; body
1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT416
SOT490
SOT346
SOT883
PDTA124XS
PDTA124XT
PDTA124XU
SOT54
SOT23
SOT323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
10
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
V
V
V
+10
40
100
100
V
V
mA
mA
I
O
I
CM
P
tot
T
amb
25
°
C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
65
65
500
250
250
200
150
250
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°
C
°
C
°
C
T
stg
T
j
T
amb
相關(guān)PDF資料
PDF描述
PDTA124X PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm
PDTA124XK PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm
PDTC114EK NPN resistor-equipped transistor
PDTC114ES NPN resistor-equipped transistor
PDTC114E NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm
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