- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367879 > PDTC114 (NXP Semiconductors N.V.) NPN resistor-equipped transistor PDF資料下載
參數(shù)資料
| 型號： | PDTC114 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN resistor-equipped transistor |
| 中文描述： | NPN配電阻型晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | PDTC114 |
1999 May 18
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC114EE
FEATURES
Built-in bias resistors R1 and R2 (typ. 10 k
each)
Simplification of circuit design
Reduces number of components and board space.
APPLICATIONS
Especially suitable for space reduction in interface and
driver circuits
Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in an SC-75 plastic
package. PNP complement: PDTA114EE.
MARKING
TYPE NUMBER
MARKING CODE
PDTC114EE
09
PINNING
PIN
DESCRIPTION
1
2
3
base/input
emitter/ground
collector/output
Fig.1 Simplified outline (SC-75) and symbol.
handbook, halfpage
MAM346
1
2
3
Top view
1
2
3
R1
R2
Fig.2 Equivalent inverter symbol.
MGA893 - 1
1
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
10
V
V
V
65
65
+40
10
100
100
150
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
≤
25
°
C; note 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PDTC114TEF | PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open |
| PDTC114TK | NPN resistor-equipped transistor |
| PDTC114TS | NPN resistor-equipped transistor |
| PDTC114EEF | NPN resistor-equipped transistor |
| PDTC115EK | NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTC114E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm |
| PDTC114EE | 制造商:PHILIPS-SEMI 功能描述: |
| PDTC114EE T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC114EE,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC114EE115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN 50V 0.1A SOT416 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。