參數(shù)資料
型號： PH5416
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： PNP high-voltage transistor
中文描述： 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC, SC-43, 3 PIN
文件頁數(shù)： 3/8頁
文件大小： 50K
代理商： PH5416
1997 Apr 22
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PH5416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
350
300
6
1
1
500
500
150
150
150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
A
A
mA
mW
°
C
°
C
°
C
T
amb
≤
25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
I
E
= 0; V
CB
=
280 V
I
C
= 0; V
EB
=
6 V
I
C
=
50 mA; V
CE
=
10 V
I
C
=
50 mA; I
B
=
5 mA
I
C
=
50 mA; I
B
=
5 mA
I
E
= i
e
= 0; V
CB
=
10 V;
f = 1 MHz
I
C
= i
c
= 0; V
EB
=
5 V;
f = 1 MHz
I
C
=
10 mA; V
CE
=
10 V;
f = 100 MHz
MIN.
MAX.
100
100
120
800
1
15
UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
30
nA
nA
mV
V
pF
C
e
emitter capacitance
75
pF
f
T
transition frequency
15
MHz
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