- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296802 > PHB12NQ15T (NXP SEMICONDUCTORS) N-channel TrenchMOS transistor PDF資料下載
參數(shù)資料
| 型號： | PHB12NQ15T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | PHB12NQ15T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP12NQ15T, PHB12NQ15T
PHD12NQ15T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 150 V
Fast switching
Low thermal resistance
I
D = 12.5 A
R
DS(ON) ≤ 200 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device
has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB12NQ15T is supplied in the SOT404 (D
2PAK) surface mounting package.
The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
SOT428 (DPAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
150
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
150
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 C; V
GS = 10 V
-
12.5
A
T
mb = 100 C; VGS = 10 V
-
8.8
A
I
DM
Pulsed drain current
T
mb = 25 C
-
50
A
P
D
Total power dissipation
T
mb = 25 C
-
88
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
12 3
tab
13
tab
2
1
2
3
tab
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHD12NQ15T | N-channel TrenchMOS transistor |
| PHP15N06E | PowerMOS transistor |
| PHT2NQ10T | N-channel TrenchMOS transistor |
| PHX5N40E | PowerMOS transistor Isolated version of PHP10N40E |
| PHX5N50E | PowerMOS transistor Isolated version of PHP8N50E |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB130N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHB130N03LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SOT-404 |
| PHB130N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHB130N03TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SOT-404 |
| PHB13N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
發(fā)布緊急采購，3分鐘左右您將得到回復。