參數(shù)資料
型號(hào): PHT2NQ10T
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: N-channel TrenchMOS transistor
中文描述: Si, SMALL SIGNAL, FET
封裝: PLASTIC, SC-73, 4 PIN
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 269K
代理商: PHT2NQ10T
PHT2NQ10T
N-channel TrenchMOS transistor
Rev. 01 — 16 October 2001
Product data
M3D087
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PHT2NQ10T in SOT223
2.
Features
s TrenchMOS technology
s Fast switching
s Surface mount package.
3.
Applications
s Primary side switch in DC to DC converters
s High speed driver
s Fast, general purpose switch.
4.
Pinning information
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pinning - SOT223, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT223
2
drain (d)
3
source (s)
4
drain (d)
4
123
MSB002 - 1
Top view
s
d
g
MBB076
相關(guān)PDF資料
PDF描述
PHX5N40E PowerMOS transistor Isolated version of PHP10N40E
PHX5N50E PowerMOS transistor Isolated version of PHP8N50E
PHX6N50E PowerMOS transistors Avalanche energy rated
PHX6N60E PowerMOS transistors Avalanche energy rated
PHX6NA60E PowerMOS transistors Low capacitance Avalanche energy rated
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHT2NQ10T,135 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHT308C 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:30A Avg 800 Volts
PHT40012 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:THYRISTOR MODULE 400A / 1200V to 1600V
PHT40012_1 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:400A Avg 1200~1600 Volts
PHT40016 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:THYRISTOR MODULE 400A / 1200V to 1600V