- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369999 > PHB30NQ15T (NXP SEMICONDUCTORS) CAP 0.1UF 100V 10% X7R AXIAL TR-14 PDF資料下載
參數(shù)資料
| 型號： | PHB30NQ15T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | CAP 0.1UF 100V 10% X7R AXIAL TR-14 |
| 中文描述： | 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 98K |
| 代理商： | PHB30NQ15T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP30NQ15T, PHB30NQ15T
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); V
GS
≥
10 V
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0.001
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0
5
10
15
20
25
30
35
0
0.2
0.4
0.6
Drain-Source Voltage, VDS (V)
0.8
1
1.2
1.4
1.6
1.8
2
Drain Current, ID (A)
4.6 V
Tj = 25 C
VGS = 10V
4.8 V
5 V
5.2 V
8 V
4.4 V
5.4 V
6 V
0.1
1
10
100
1000
1
100
1000
Dra10
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
5
10
15
20
25
30
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
5.2V
8 V
4.4 V
4.8 V
5 V
4.6V
6 V
5.4V
August 1999
4
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| PHB64N03LT | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| PHB78NQ03LT | N-channel enhancement mode field-effect transistor |
| PHD78NQ03LT | N-channel enhancement mode field-effect transistor |
| PHB95N03LTA | 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C |
| PHB95NQ04LT | N-channel TrenchMOS logic level FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHB32N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHB32N06LT /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB32N06LT,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB33NQ20T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS⑩ standard level FET |
| PHB33NQ20T /T3 | 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。