參數(shù)資料
型號: PHB95N03LTA
英文描述: 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C
中文描述: 晶體管| MOSFET的| N溝道| 22V的五(巴西)直| 75A條(丁)|對263AB
文件頁數(shù): 3/12頁
文件大?。?/td> 258K
代理商: PHB95N03LTA
Philips Semiconductors
PHB95N03LTA
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2002
3 of 12
9397 750 10027
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03ad94
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ad77
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS
/ ID
1 ms
tp = 10
μ
s
100
μ
s
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