參數(shù)資料
型號： PHB95N03LTA
英文描述： 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C
中文描述： 晶體管| MOSFET的| N溝道| 22V的五（巴西）直| 75A條（?。﹟對263AB
文件頁數(shù)： 5/12頁
文件大?。?/td> 258K
代理商： PHB95N03LTA
Philips Semiconductors
PHB95N03LTA
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2002
5 of 12
9397 750 10027
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 25 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
5 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
°
C
25
22
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
1
0.5
-
1.5
-
-
2
-
2.3
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
10
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
7.5
13
9
15.5
m
m
-
4.8
6
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
I
D
= 50 A; V
DD
= 12 V; V
GS
= 4.5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
43
12
16
2200 -
770
500
10
30
110
80
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
-
-
20
50
140
100
V
DD
= 15 V; I
D
= 15 A; V
GS
= 10 V;
R
G
= 6
; resistive load
-
-
0.85
0.9
1.2
-
V
V
I
S
= 40 A; V
GS
= 0 V
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