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參數(shù)資料
| 型號： | PHN210 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Dual N-channel enhancement mode TrenchMOS transistor |
| 中文描述： | 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 109K |
| 代理商： | PHN210 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
TrenchMOS
TM
transistor
PHN210
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
3.2 V
3.4 V
4 V
Tj = 25 C
VGS = 20 V
3.6 V
3.8 V
5V
10 V
4.2 V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
6
7
8
9
10
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =5 V
4.2 V
20V
Tj = 25 C
3.8V
4 V
3.6 V
10V
3.2 V
3.4 V
-50
0
50
100
150
0
0.5
1
1.5
2
SOT223 30V Trench
Tj / C
a
Normalised RDS(ON) = f(Tj)
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
150 C
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
February 1999
4
Rev 1.000
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHN210 /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode |
| PHN210T /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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