參數(shù)資料
型號(hào): PHN405
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: 4 N-channel 60 mohm FET array enhancement mode MOS transistors
中文描述: 3700 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AC
文件頁(yè)數(shù): 4/12頁(yè)
文件大小: 94K
代理商: PHN405
1998 Mar 17
4
Philips Semiconductors
Product specification
4 N-channel 60 m
FET array
enhancement mode MOS transistors
PHN405
Fig.2 Power derating curve.
handbook, halfpage
(W)
1.6
0
50
100
Ts (
°
C)
200
0
150
1.2
0.8
0.4
MDA804
Fig.3 SOAR.
δ
= 0.01; T
s
= 80
°
C.
(1) R
DSon
limitation.
handbook, halfpage
ID
(A)
MDA805
2
10
1
10
10
1
2
1
10
1
10
2
10
tp
T
P
t
tp
T
δ
=
100 ms
10 ms
1 s
DC
(1)
tp =
1 ms
VDS (V)
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
When only one FET dissipates.
When either FETs 1 and 3 or 2 and 4 dissipate an equal amount of power.
When all four FETs dissipate an equal amount of power.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per FET
R
th j-s
thermal resistance from junction to soldering point
note 1
note 2
note 3
50
56
64
K/W
K/W
K/W
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