參數(shù)資料
型號: PHP1025
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: P-channel enhancement mode MOS transistor
中文描述: 10000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SOT96-1, SMD, SO-8
文件頁數(shù): 2/8頁
文件大?。?/td> 51K
代理商: PHP1025
1998 Feb 18
2
Philips Semiconductors
Objective specification
P-channel enhancement mode
MOS transistor
PHP1025
FEATURES
Very low R
DSon
at low threshold
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL, etc.
APPLICATIONS
Power management
DC-DC converters
General purpose switch.
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
SOT96-1 (SO8) SMD plastic package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
s
s
s
g
d
d
d
d
source
source
source
gate
drain
drain
drain
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
4
5
1
Top view
MAM398
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
12
1.3
±
8
10
25
4
UNIT
V
DS
V
SD
V
GSO
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
0.4
V
V
V
V
A
m
W
I
S
=
1.25 A; V
GD
= 0
open drain
I
D
=
1 mA; V
DS
= V
GS
T
s
= 80
°
C
I
D
=
5 A; V
GS
=
2.5 V
T
s
= 80
°
C
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