參數(shù)資料
型號(hào): PHP1035
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: P-channel enhancement mode MOS transistor
中文描述: 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 51K
代理商: PHP1035
1998 Feb 18
3
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Device mounted on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Device mounted on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
±
20
8
32
4
2.78
1.16
+150
+150
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
55
55
V
V
A
A
W
W
W
°
C
°
C
open drain
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C
T
amb
= 25
°
C; note 3
T
amb
= 25
°
C; note 4
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
3
12
A
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
17.5
K/W
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