參數(shù)資料
型號(hào)： PHP10N60E
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 9.6 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 21K
代理商： PHP10N60E
Philips Semiconductors
Preliminary specification
PowerMOS transistors
Avalanche energy rated
PHP10N60E
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.75
K/W
-
60
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 600 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
600
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 4.4 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 4.4 A
-
0.7
3.0
5.5
2
80
10
130
8
60
20
55
160
70
3.5
4.5
7.5
0.75
4.0
-
100
1000
200
150
10
85
-
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
2.0
4
-
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 480 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
L
s
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
I
D
= 8.7 A; V
DD
= 480 V; V
GS
= 10 V
V
DD
= 300 V; R
D
= 33
;
R
G
= 5.6
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1500
200
112
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
9.6
A
T
mb
= 25C
-
-
38
A
I
S
= 9.6 A; V
GS
= 0 V
I
S
= 9.6 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
740
9
August 1998
2
Rev 1.000
相關(guān)PDF資料
PDF描述
PHP112N06T N-channel enhancement mode field-effect transistor
PHB112N06T N-channel enhancement mode field-effect transistor
PHP112 Microprocessor Supervisory Circuit; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C
PHP11N50E PowerMOS transistors Avalanche energy rated
PHP12N10E KPT 8C 8#16 PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP-10P10C-5 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述:
PHP110NQ06LT 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP110NQ06LT,127 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP110NQ08LT 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHP110NQ08LT,127 功能描述:MOSFET N-CH 75V 75A TO220AB RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*