參數(shù)資料
型號: PHP112N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 7/14頁
文件大?。?/td> 262K
代理商: PHP112N06T
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
7 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C; V
DS
=
25 V
Fig 12. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
0
1
2
3
4
5
0
40
80
120
160
Tj (oC)
200
-40
-80
max.
typ
min
VGS(th)
(V)
003aaa077
2%
typ
98%
10-1
10-2
10-3
10-4
10-5
10-6
0
1
2
3
4
5
ID
(A)
VGS(V)
003aaa078
60
50
40
30
20
10
0
100
80
60
40
20
0
ID (A)
gfs
(S)
003aaa075
Ciss,
Coss,
Crss
(nF)
7
6
5
4
3
2
1
0
10-2
10-1
1
10
102
VDS(V)
Ciss
Coss
Crss
003aaa079
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