參數(shù)資料
型號: PHP112N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 8/14頁
文件大?。?/td> 262K
代理商: PHP112N06T
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
8 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 50 A; V
DD
= 14 V and 44 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
100
90
80
70
60
50
40
30
20
10
0
IS
(A)
VSD (V)
0
0.2
1.0
1.2
0.4
0.6
0.8
Tj = 150 oC
Tj = 25 oC
003aaa082
0
2
4
6
8
10
0
20
40
60
80
100
(V)
VDD = 44 V
VDD = 14 V
ID = 50 A
VGS
QG (nC)
003aaa081
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