參數(shù)資料
型號: PHP160NQ08T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: CAP 0.1UF 100V 10% X7R AXIAL TR-14
中文描述: 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 3/13頁
文件大小: 89K
代理商: PHP160NQ08T
Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 28 January 2004
3 of 13
9397 750 12719
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 10 V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03ap65
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
I
D 25 C
°
)
-------------------
100
%
×
=
03ap67
1
10
102
103
1
10
102
103
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS / ID
1 ms
tp = 10
μ
s
1 s
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