參數(shù)資料
型號: PHP160NQ08T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: CAP 0.1UF 100V 10% X7R AXIAL TR-14
中文描述: 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 6/13頁
文件大?。?/td> 89K
代理商: PHP160NQ08T
Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 28 January 2004
6 of 13
9397 750 12719
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ap68
0
80
160
240
0
1
2
3
4
VDS (V)
ID
(A)
Tj = 25
°
C
VGS = 4.5 V
5 V
5.5 V
10 V
6 V
03ap70
0
25
50
75
0
2
4
6
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 175
°
C
25
°
C
03ap69
0
5
10
15
20
0
80
160
240
ID (A)
RDSon
(m
)
VGS = 5.5 V
Tj = 25
°
C
10 V
6 V
5 V
03nb25
0
0.8
1.6
2.4
-60
0
60
120
180
Tj (
°
C)
a
a
R
DSon 25 C
)
----------------------------
=
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